IRHMJ3250 - (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Features
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan.
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PD-96914
RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless)
™
IRHMJ7250 200V, N-CHANNEL
®
TECHNOLOGY
Product Summary
Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) IRHMJ4250 IRHMJ8250 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.10 Ω 0.10 Ω 0.10 Ω 0.10 Ω ID 26A 26A 26A 26A
TO-254AA Tabless
International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
IRHMJ3250 Datasheet
