IRHMJ57260SE
IRHMJ57260SE is RADIATION HARDENED POWER MOSFET SURFACE MOUNT manufactured by International Rectifier.
Features
: n n n n n n n n n n
Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electically Isolated Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight
- Current is limited by package For footnotes refer to the last page 35- 28 140 208 1.67 ±20 320 35 20.8 10 -55 to 150 300 (for 5s) 8.0 (Typical)
Pre-Irradiation
Units A
W/°C
V m J A m J V/ns o
C g
.irf.
12/24/04
Pre-Irradiation
Min
- - 2.5 35
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆ BVDSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Typ Max Units
- 0.27
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- - 6.8
- - 0.049 4.5
- 10 25 100 -100 165 45 75 35 125 80...
