IRHMJ58160 - (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
This page provides the datasheet information for the IRHMJ58160, a member of the IRHMJ53160 (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT family.
Features
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Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Di.
IRHMJ53160- (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHMJ54160- (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHMJ57160- (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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IRHMJ3250- (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHMJ4250- (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHMJ7250- (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHMJ8250- (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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PD-96916
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
Product Summary
Part Number Radiation Level IRHMJ57160 100K Rads (Si) IRHMJ53160 IRHMJ54160 300K Rads (Si) 600K Rads (Si) RDS(on) 0.018Ω 0.018Ω 0.018Ω 0.019Ω ID 35A* 35A* 35A* 35A*
IRHMJ57160 100V, N-CHANNEL
5
TECHNOLOGY
IRHMJ58160 1000K Rads (Si)
TO-254AA Tabless
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
IRHMJ58160 Datasheet
