IRHN7450SE datasheet by International Rectifier (now Infineon).
| Part number | IRHN7450SE |
|---|---|
| Datasheet | IRHN7450SE_InternationalRectifier.pdf |
| File Size | 212.54 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | TRANSISTOR N-CHANNEL |
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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1313A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7450SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 500 Volt, 0.51Ω , (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions,...
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHN7450 | (IRHN7450 / IRHN8450) HEXFET TRANSISTOR |
| IRHN7130 | Radiation Hardened Power MOSFET |
| IRHN7150 | Radiation Hardened Power MOSFET |
| IRHN7230 | N-Channel Transistor |
| IRHN7250 | Radiation Hardened Power MOSFET |
| IRHN7250SE | Radiation Hardened Power MOSFET |
| IRHN7C50SE | N-Channel Transistor |
| IRHN2C50SE | N-Channel Transistor |
| IRHN3150 | Radiation Hardened Power MOSFET |
| IRHN4150 | RADIATION HARDENED POWER MOSFET |
