This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRHN7C50SE |
|---|---|
| Datasheet | IRHN7C50SE IRHN2C50SE Datasheet (PDF) |
| File Size | 32.41 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | N-Channel Transistor |
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Provisional Data Sheet No. PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN2C50SE IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600 Volt, 0.60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs...
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHN7130 | Radiation Hardened Power MOSFET |
| IRHN7150 | Radiation Hardened Power MOSFET |
| IRHN7230 | N-Channel Transistor |
| IRHN7250 | Radiation Hardened Power MOSFET |
| IRHN7250SE | Radiation Hardened Power MOSFET |
| IRHN7450 | (IRHN7450 / IRHN8450) HEXFET TRANSISTOR |
| IRHN7450SE | TRANSISTOR N-CHANNEL |
| IRHN2C50SE | N-Channel Transistor |
| IRHN3150 | Radiation Hardened Power MOSFET |
| IRHN4150 | RADIATION HARDENED POWER MOSFET |
