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IRHNJ54034 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHNJ54034, a member of the IRHNJ53034 RADIATION HARDENED POWER MOSFET family.

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.

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Full PDF Text Transcription

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www.DataSheet4U.com PD-93752C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) IRHNJ54034 600K Rads (Si) IRHNJ58034 1000K Rads (Si) RDS(on) 0.030Ω 0.030Ω 0.030Ω 0.038Ω IRHNJ57034 JANSR2N7480U3 60V, N-CHANNEL REF: MIL-PRF-19500/703 5 TECHNOLOGY ™ ID QPL Part Number 22A* JANSR2N7480U3 22A* JANSF2N7480U3 22A* JANSG2N7480U3 22A* JANSH2N7480U3 SMD-0.5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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