This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRHNJ54130 |
|---|---|
| Datasheet | IRHNJ54130 IRHNJ53130 Datasheet (PDF) |
| File Size | 276.59 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | RADIATION HARDENED POWER MOSFET |
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MIL-PRF-19500/703 TECHNOLOGY 4 # c 1000K Rads (Si) 0.075 Ω SMD-0.5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC...
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHNJ54034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54230 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54Z30 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53230 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53Z30 | RADIATION HARDENED POWER MOSFET |
| IRHNJ57034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ57130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ57230 | RADIATION HARDENED POWER MOSFET |
