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IRHNJ58130 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHNJ58130, a member of the IRHNJ53130 RADIATION HARDENED POWER MOSFET family.

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 93754E RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130 600K Rads (Si) IRHNJ58130 RDS(on) 0.06 Ω 0.06 Ω 0.06 Ω ID 22A* 22A* 22A* 22A* QPL Part Number JANSR2N7481U3 JANSF2N7481U3 JANSG2N7481U3 JANSH2N7481U3 IRHNJ57130 JANSR2N7481U3 100V, N-CHANNEL REF: MIL-PRF-19500/703 TECHNOLOGY 4 # c 1000K Rads (Si) 0.075 Ω SMD-0.5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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