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IRHNJ58Z30 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHNJ58Z30, a member of the IRHNJ53Z30 RADIATION HARDENED POWER MOSFET family.

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Volta.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 93751B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 IRHNJ54Z30 300K Rads (Si) 600K Rads (Si) RDS(on) 0.020Ω 0.020Ω 0.020Ω 0.025Ω ID 22A* 22A* 22A* 22A* IRHNJ57Z30 30V, N-CHANNEL 4 # TECHNOLOGY c IRHNJ58Z30 1000K Rads (Si) SMD-0.5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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