IRHNJ67130 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRHNJ67130 datasheet PDF. This datasheet also includes the IRHNJ68130 variant, as both parts are published together in a single manufacturer document.

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IRHNJ67130 radiation hardened power mosfet by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRHNJ68130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRHNJ67130
Manufacturer	International Rectifier (now Infineon)
File Size	1.92 MB
Description	Radiation Hardened Power MOSFET
Datasheet	IRHNJ67130 Datasheet

General Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Overview

IRHNJ67130 (JANSR2N7587U3) Radiation Hardened Power MOSFET Surface Mount (SMD-0.

Key Features

Single event effect (SEE) hardened.
Low RDS(on).
Fast switching.
Low total gate charge.
Simple drive requirements.
Hermetically sealed.
Ceramic package.
Surface mount.
ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
BVDSS: 100V.
ID : 22A.
RDS(on),max : 42m.
QG: 50nc.
REF: MIL-PRF-19500/746 Potential.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRHNJ67134	RADIATION HARDENED POWER MOSFET
IRHNJ67230	POWER MOSFET
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IRHNJ63134	RADIATION HARDENED POWER MOSFET
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IRHNJ64130	(IRHNJ6x130) MOSFET
IRHNJ68130	MOSFET
IRHNJ3130	N-CHANNEL MOSFET
IRHNJ4130	N-CHANNEL MOSFET
IRHNJ53034	RADIATION HARDENED POWER MOSFET