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IRHNJ63130 Datasheet N-Channel MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRHNJ63130 datasheet PDF. This datasheet also includes the IRHNJ68130 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRHNJ68130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).

Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.

Overview

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-95816E IRHNJ67130 JANSR2N7587U3 100V, N-CHANNEL REF: MIL-PRF-19500/746 R6 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67130 100 kRads(Si) IRHNJ63130 300 kRads(Si) RDS(on) 0.042 0.042 ID 22A* 22A* QPL Part Number JANSR2N7587U3 JANSF2N7587U3 SMD-0.

Key Features

  • Low RDS(on).
  • Fast Switching.
  • Single Event Effect (SEE) Hardened.
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Ceramic Package.
  • Surface Mount.
  • ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation.