Datasheet Details
| Part number | IRHNJ63130 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 1.92 MB |
| Description | N-Channel MOSFET |
| Datasheet |
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Download the IRHNJ63130 datasheet PDF. This datasheet also includes the IRHNJ68130 variant, as both parts are published together in a single manufacturer document.
| Part number | IRHNJ63130 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 1.92 MB |
| Description | N-Channel MOSFET |
| Datasheet |
|
|
|
|
IR HiRel R6 technology provides high performance power MOSFETs for space applications.
These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-95816E IRHNJ67130 JANSR2N7587U3 100V, N-CHANNEL REF: MIL-PRF-19500/746 R6 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67130 100 kRads(Si) IRHNJ63130 300 kRads(Si) RDS(on) 0.042 0.042 ID 22A* 22A* QPL Part Number JANSR2N7587U3 JANSF2N7587U3 SMD-0.
| Part Number | Description |
|---|---|
| IRHNJ63134 | RADIATION HARDENED POWER MOSFET |
| IRHNJ63230 | RADIATION HARDENED POWER MOSFET |
| IRHNJ64130 | (IRHNJ6x130) MOSFET |
| IRHNJ67130 | Radiation Hardened Power MOSFET |
| IRHNJ67134 | RADIATION HARDENED POWER MOSFET |
| IRHNJ67230 | POWER MOSFET |
| IRHNJ68130 | MOSFET |
| IRHNJ3130 | N-CHANNEL MOSFET |
| IRHNJ4130 | N-CHANNEL MOSFET |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET |