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IRHNJ64130 Datasheet (IRHNJ6x130) MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRHNJ64130 datasheet PDF. This datasheet also includes the IRHNJ68130 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRHNJ68130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com PD - 95816 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ67130 100K Rads (Si) IRHNJ63130 IRHNJ64130 300K Rads (Si) 600K Rads (Si) TM IRHNJ67130 100V, N-CHANNEL TECHNOLOGY RDS(on) 0.042Ω 0.042Ω 0.042Ω 0.042Ω ID 22A* 22A* 22A* 22A* IRHNJ68130 1000K Rads (Si) SMD-0.5 International Rectifier’s R6 technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).

Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.

Key Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sing.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRHNJ63130 N-Channel MOSFET
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IRHNJ67130 Radiation Hardened Power MOSFET
IRHNJ67134 RADIATION HARDENED POWER MOSFET
IRHNJ67230 POWER MOSFET
IRHNJ68130 MOSFET
IRHNJ3130 N-CHANNEL MOSFET
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