Datasheet4U Logo Datasheet4U.com

IRHNJ8130 - N-CHANNEL MOSFET

This page provides the datasheet information for the IRHNJ8130, a member of the IRHNJ3130 N-CHANNEL MOSFET family.

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.

📥 Download Datasheet

Datasheet preview – IRHNJ8130

📁 Similar Datasheet

  • IRH-12-12.5-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
  • IRH-24-6.3-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
  • IRH-5-30-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
  • IRH3 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRH310 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRH320 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRH360 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRHM2C50SE - N-Channel Transistor (IRF)
  • IRHM53260 - (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE (IRF)
  • IRHM54260 - (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE (IRF)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 93820 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si) RDS(on) 0.18Ω 0.18Ω 0.18Ω 0.18Ω ID 14.4A 14.4A 14.4A 14.4A IRHNJ7130 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY ™ ® SMD-0.5 International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
Published: |