This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRHNJ8130 |
|---|---|
| Datasheet | IRHNJ8130 IRHNJ3130 Datasheet (PDF) |
| File Size | 257.98 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | N-CHANNEL MOSFET |
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This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHNJ3130 | N-CHANNEL MOSFET |
| IRHNJ4130 | N-CHANNEL MOSFET |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53230 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53Z30 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54230 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54Z30 | RADIATION HARDENED POWER MOSFET |
