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IRHNJC9A3130 - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the IRHNJC9A3130, a member of the IRHNJC9A7130 N-CHANNEL POWER MOSFET family.

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).

Features

  • Low RDS(on).
  • Fast Switching.
  • Single Event Effect (SEE) Hardened.
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Ceramic package.
  • Light Weight.
  • Surface Mount.
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 12V, TC = 25°C ID2 @ VGS = 12V, TC = 100°C IDM @TC = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pu.

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Full PDF Text Transcription

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) (Ceramic Lid) PD-97911 IRHNJC9A7130 JANSR2N7648U3C 100V, N-CHANNEL R 9 REF: MIL-PRF-19500/775 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJC9A7130 100 kRads (Si) IRHNJC9A3130 300 kRads (Si) RDS(on) 34m 34m ID QPL Part Number 35A JANSR2N7648U3C 35A JANSF2N7648U3C SMD-0.5 (Ceramic Lid) Description IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
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