IRHNJC9A3130 Datasheet | International Rectifier

Description IR Hi Rel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90Me V/(mg/cm2). Their bination of low RDS(on) and faster switching times reduces the power losses and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features - Low RDS(on) - Fast Switching - Single Event Effect (SEE) Hardened - Low Total Gate Charge - Simple Drive Requirements - Hermetically Sealed - Ceramic package - Light Weight - Surface Mount - ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 12V, TC = 25°C ID2 @ VGS = 12V, TC = 100°C IDM @TC = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  Operating Junction and Storage Temperature Range Package Mounting Surface Temperature Weight Value 22 140 75 0.6 ± 20 605 35 7.5 13 Pre-Irradiation Units W W/°C V m J A m J V/ns -55 to + 150 °C 300 (for 5s) 1.0 (Typical) g For Footnotes, refer to the page 2. 1 International Rectifier Hi Rel Products, Inc. 2019-01-15...