IRHYS9A97230CM Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

IRHYS9A97230CM radiation hardened power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRHYS9A97230CM
Manufacturer	International Rectifier (now Infineon)
File Size	803.29 KB
Description	Radiation Hardened Power MOSFET
Download	IRHYS9A97230CM Download (PDF)

General Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90.5 MeV·cm2/mg.

Overview

IRHYS9A97230CM, IRHYB9A97230CM PD-97960B Radiation Hardened Power MOSFET Thru-Hole (Low-Ohmic TO-257AA) -200V, -14A, P-channel, R9 Superjunction.

Key Features

Single event effect (SEE) hardened (up to LET of 90.5 MeV.
cm2/mg).
Improved SOA for linear mode operation.
Low RDS(on).
Improved avalanche energy.
Simple drive requirements.
Hermetically sealed.
Electrically isolated.
Ceramic eyelets.
ESD rating: class 2 per MIL-STD-750, Method 1020 Product Summary.
BVDSS: -200V.
ID : -14A.
RDS(on),max : 175m.
QG,max : 49nC.
REF: MIL-PRF-19500/780 Potential.

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