IRIS-A6351
Overview
Key Specifications MOSFET RDS(ON) Pout(W) Type VDSS(V) MAX ACinput(V) Note 1 230±15% 10 IRIS-A6351 650 3.95Ω 85 to 264 8 Note 1: The Pout(W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 150% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout(W) shall become lower than that of above.
- Oscillator is provided on the monolithic control IC with adopting On-ChipTrimming technology. Package Outline
- Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
- Low start-up circuit current (50uA max)
- Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
- Avalanche energy guaranteed MOSFET with high VDSS
- The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
- No VDSS de-rating is required.
- Built-in constant voltage drive circuit 8 Lead PDIP
- Various kinds of protection functions
- Pulse-by-pulse Overcurrent Protection (OCP)
