IRIS-A6359
Overview
Key Specifications Type MOSFET VDSS(V) RDS(ON) MAX AC input(V) Pout(W) Note 1 230±1.
- Oscillator is provided on the monolithic control IC with adopting On-ChipTrimming technology. Package Outline
- Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
- Low start-up circuit current (50uA max)
- Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
- Avalanche energy guaranteed MOSFET with high VDSS
- The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
- No VDSS de-rating is required.
- Built-in constant voltage drive circuit 8 Lead PDIP
- Various kinds of protection functions
- Pulse-by-pulse Overcurrent Protection (OCP)
