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IRL1404PBF - Power MOSFET

General Description

Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • or Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www. irf. com.
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL1404PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information.

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Other Datasheets by International Rectifier (now Infineon)

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IRL1404 HEXFET Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95588A IRL1404PbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free D VDSS = 40V RDS(on) = 4.0mΩ G S ID = 160A† Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.