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IRL1404PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 95588A IRL1404PbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free D VDSS = 40V RDS(on) = 4.

General Description

Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Key Features

  • or Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www. irf. com.
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL1404PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information.

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