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IRL5NJ7413 - HEXFET POWER MOSFET SURFACE MOUNT

Features

  • n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current.

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Datasheet Details

Part number IRL5NJ7413
Manufacturer International Rectifier
File Size 191.58 KB
Description HEXFET POWER MOSFET SURFACE MOUNT
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www.DataSheet4U.com PD - 94271B HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRL5NJ7413 BVDSS IRL5NJ7413 30V, N-CHANNEL RDS(on) 0.014Ω ID 22A* 30V Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.
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