Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- B-
1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 )
L E A D A S S IG N M E N T S 1 - GATE 2 - DR AIN 3 - SOURCE 4 - DR AIN
3X
1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 )
2 . 5 4 ( .1 0 0 )
3X
0 . 9 3 ( .0 3 7 ) 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 ) M B A M
3X
0.5 5 (.02 2) 0.4 6 (.01 8)
2 .9 2 (. 1 1 5 ) 2 .6 4 (. 1 0 4 )
2X NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L I N G D IM E N S IO N : I N C H
3 O U T L IN E C O N F O R M S T O J E.
IRL6903 Datasheet
