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IRL6903 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 watts.

Key Features

  • B- 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 ) L E A D A S S IG N M E N T S 1 - GATE 2 - DR AIN 3 - SOURCE 4 - DR AIN 3X 1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 ) 2 . 5 4 ( .1 0 0 ) 3X 0 . 9 3 ( .0 3 7 ) 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M B A M 3X 0.5 5 (.02 2) 0.4 6 (.01 8) 2 .9 2 (. 1 1 5 ) 2 .6 4 (. 1 0 4 ) 2X NO TE S : 1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L I N G D IM E N S IO N : I N C H 3 O U T L IN E C O N F O R M S T O J E.

IRL6903 Distributor