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IRL7486MPbF - N-Channel Power MOSFET

This page provides the datasheet information for the IRL7486MPbF, a member of the IRL7486MTRPbF N-Channel Power MOSFET family.

Features

  • ) 1msec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 10msec DC 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Maximum Safe Operating Area 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) Fig 12. Typical Coss Stored Energy RDS(on), Drain-to -Source On Resistance ( m) 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www. irf. com © 2015 Interna.

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Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant StrongIRFET™ IRL7486MTRPbF DirectFET® N-Channel Power MOSFET  VDSS RDS(on) typ. max @ VGS = 10V RDS(on) typ. max @ VGS = 4.5V ID (Silicon Limited) 40V 1.0m 1.25m 1.5m 2.
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