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IRL7486MPbF - N-Channel Power MOSFET

Download the IRL7486MPbF datasheet PDF. This datasheet also covers the IRL7486MTRPbF variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ) 1msec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 10msec DC 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Maximum Safe Operating Area 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) Fig 12. Typical Coss Stored Energy RDS(on), Drain-to -Source On Resistance ( m) 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www. irf. com © 2015 Interna.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL7486MTRPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRL7472L1 Power MOSFET Infineon
IRL7472L1TRPbF Power MOSFET Infineon
IRL7833 N-Channel MOSFET INCHANGE
IRL7833S N-Channel MOSFET INCHANGE
IRL1004 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL7486M N-Channel Power MOSFET
IRL7486MTRPbF N-Channel Power MOSFET
IRL7472L1PbF N-Channel Power MOSFET
IRL7472L1TRPbF N-Channel Power MOSFET
IRL7833 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Application Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant StrongIRFET™ IRL7486MTRPbF DirectFET® N-Channel Power MOSFET  VDSS RDS(on) typ. max @ VGS = 10V RDS(on) typ. max @ VGS = 4.5V ID (Silicon Limited) 40V 1.0m 1.25m 1.5m 2.