IRL8114PbF - Power MOSFET

Datasheet Summary

Features

rating; pulse width limited by max. junction temperature.  Limited by TJMAX, starting TJ = 25°C, L = 0.39mH, RG = 50, IAS = 32A, VGS =10V.
Pulse width  400µs; duty cycle  2%.  R is measured at TJ approximately 90°C.  Pulse drain current is limited at 360A by source bond technology. IR WORLD.

International Rectifier

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Datasheet Details

Part number	IRL8114PbF
Manufacturer	International Rectifier
File Size	408.36 KB
Description	Power MOSFET
Datasheet	IRL8114PbF Datasheet
Additional preview pages of the IRL8114PbF datasheet.

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Application  Optimized for UPS/Inverter Applications  Low Voltage Power Tools Benefits  Low RDS(on) at 4.5V VGS  Low Gate Charge  Fully Characterized Capacitance and Avalanche SOA  Lead-Free IRL8114PbF HEXFET® Power MOSFET D VDSS 30V RDS(on) typ. 3.5m G max 4.

Published: Feb 6, 2016 |