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IRLF120 Datasheet N-CHANNEL TRANSISTORS

Manufacturer: International Rectifier (now Infineon)

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Overview

PD-90639C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-39) Product Summary Part Number BVDSS IRLF120 100V RDS(on) 0.35Ω ID 5.3A IRLF120 100V, N-CHANNEL The Logic Level ‘L’ series of power MOSFETs are designed to be operated with level logic gate-to-source voltage of 5V.

In addition to the well established characterstics of HEXFETs®, they have the added advantage of providing low drive requirements to interface power loads to logic level IC’s and microprocessors.

TO-39 Fields of applications include: high speed power applications such as switching regulators, switching converters, motor drivers, solenoid and relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gatedrive voltage.

Key Features

  • n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Low Drive Requirements n Execellent Temperature Stability n Fast Switching Speeds n Ease of Paralleling n Hermetically Sealed n Light Weight . Absolute Maximum Ratings Parameter ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor 5.3 3.4 21 20 0.16 Units A W W/°C VGS EAS IAR EAR dv/dt TJ TST.

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