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IRLIB4343PBF - DIGITAL AUDIO MOSFET

Description

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications.

This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier.

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PD - 95755 DIGITAL AUDIO MOSFET IRLIB4343PbF Key Parameters Features l l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repetitive Avalanche Capability for Robustness and Reliability Lead-Free VDS RDS(ON) typ. @ VGS = 10V RDS(ON) typ. @ VGS = 4.5V Qg typ. TJ max 55 42 57 28 175 V m: m: nC °C D G S TO-220 Full-Pak Description This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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