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IRLI2203N - POWER MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 9.1378A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI2203N HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.007Ω G ID = 61A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.