IRLI2505 Overview
l l D VDSS = 55V G S RDS(on) = 0.008Ω ID = 58A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of...
IRLI2505 Key Features
- Ultra Low On-Resistance
- Isolated Package
- High Voltage Isolation = 2.5KVRMS
- Sink to Lead Creepage Dist. = 4.8mm