IRLI2910 Overview
l l IRLI2910 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.026Ω G ID = 31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable...
IRLI2910 Key Features
- Ultra Low On-Resistance
- Isolated Package
- High Voltage Isolation = 2.5KVRMS
- Sink to Lead Creepage Dist. = 4.8mm
