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IRLI2910PBF-VB
IRLI2910PBF-VB Datasheet
N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.034 at VGS = 10 V
ID (A) 50a
FEATURES • Trench Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested
APPLICATIONS • Isolated DC/DC Converters
RoHS
COMPLIANT
TO-220 FULLPAK
D
GDS
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current Single Pulse Avalanche Energyb
L = 0.
IRLI2910PBF Datasheet
