VBsemi Electronics IRLI2910PBF
N-Channel 100V MOSFET
IRLI2910PBF Specifications
- Package : TO-220AB
- Mount Type : Through Hole
- Current Rating : 27A
- Breakdown Voltage : 100V
- Threshold Voltage : 2V
- RDS(on) Max : 26mΩ
- Drain-Source Resistance : 30mΩ
- Input Capacitance : 3.7nF
- Terminals : 3
- Channels : 1
- Isolation Voltage : 2500Vrms
- Rise Time : 100ns
- Fall Time : 55ns
- Max Power Dissipation : 48W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRLI2910PBF |
|---|---|
| Datasheet | IRLI2910PBF Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 100V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 175 °C Junction Temperature
● Low Thermal Resistance Package
● 100 % Rg Tested
APPLICATIONS
● Isolated DC/DC Converters RoHS COMPLIANT TO-220 FULLPAK D GDS G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TA = 25 °Cd PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). PCB Mount (TO-263)d Symbol RthJA RthJC Limit 100 ± 20 50a 28a 120 31 61 360c 3.70 - 55 to 175 Limit 40 0.4 Unit V A mJ W °C Unit °C/W 1 IRLI2910PBF-VB SPECIFICATIONS TJ = 25 °C...
