| Part Number | IRLI2910 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤ 26mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Low drain-source on-resistance: RDS(on) ≤ 26mΩ (max) *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *It is intended for general purpose switching applications *ABSOLUTE MAXIMUM RATINGS(. |
IRLI2910 Datasheet and Specifications PDF
The IRLI2910 is a N-Channel MOSFET.
| Part Number | IRLI2910 Datasheet |
|---|---|
| Description | POWER MOSFET |
| Manufacturer | International Rectifier |
| Overview | l l IRLI2910 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.026Ω G ID = 31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low. ron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V . |