IRLML0100PBF-1 Overview
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 100 V 220 mΩ 2.5 nC 1.6 A IRLML0100PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3TM.
IRLML0100PBF-1 datasheet by International Rectifier (now Infineon).
| Part number | IRLML0100PBF-1 |
|---|---|
| Datasheet | IRLML0100PBF-1-InternationalRectifier.pdf |
| File Size | 214.95 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | Power MOSFET |
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VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 100 V 220 mΩ 2.5 nC 1.6 A IRLML0100PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3TM.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRLML0100 | Power MOSFET |
| IRLML0100TRPBF | Power MOSFET |
| IRLML0030 | Power MOSFET |
| IRLML0030PBF-1 | Power MOSFET |
| IRLML0030TRPBF | Power MOSFET |
| IRLML0040TRPBF | HEXFET Power MOSFET |
| IRLML0060TRPBF | HEXFET Power MOSFET |
| IRLML2030 | Power MOSFET |
| IRLML2030TRPBF | Power MOSFET |
| IRLML2060TRPBF | Power MOSFET |