IRLML2402PBF Datasheet | International Rectifier

IRLML2402PbF l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint G1 l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free S2 l RoHS pliant, Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET VDSS = 20V 3D RDS(on) = 0.25Ω A...