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PD - 96163A
IRLML2502GPbF
l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l Halogen-Free
HEXFET® Power MOSFET
G1
VDSS = 20V
3D
RDS(on) = 0.045Ω
S2
Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
IRLML2502GPBF Datasheet
