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IRLML2502PbF
l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
G1
VDSS = 20V
3D
RDS(on) = 0.045Ω
S2
Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
IRLML2502PBF Datasheet
