IRLML2502PBF Datasheet | International Rectifier

Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3™ Base Part Number IRLML2502TRPb F Package Type Micro3™ (SOT-23) Standard Pack Form Quantity Tape and Reel Orderable Part Number IRLML2502TRPb F Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient- Max. 20 4.2 3.4 33 1.25 0.8 0.01 ± 12 -55 to + 150 Typ. 75 Max. 100 Units V W W/°C V °C Units °C/W .irf. © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2502Pb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) gfs IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient...