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IRLML2502PBF - POWER MOSFET

General Description

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.

Overview

IRLML2502PbF l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l RoHS Compliant, Halogen-Free HEXFET® Power MOSFET G1 VDSS = 20V 3D RDS(on) = 0.