IRLML2803 Datasheet | International Rectifier

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. G1 S2 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS dv/dt TJ ,TSTG Gate-to-Source Voltage g Single Pulse Avalanche Energy d Peak diode Recovery dv/dt Junction and Storage Temperature Range Thermal Resistance Parameter f RθJA Maximum Junction-to-Ambient .irf. - 91258F HEXFET® Power MOSFET VDSS = 30V 3D RDS(on) = 0.25Ω Micro3™ Max. 1.2 0.93 7.3 540 4.3 ±20 3.9 5.0 -55 to + 150 Units A m W m W/°C V m J V/ns °C Typ. - - - Max. 230 Units °C/W 12/14/11 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions...