IRLML2803TR
IRLML2803TR is 30V N-ChanneI MOSFET manufactured by UMW.
Description
The IRLML2803TR uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a loads witch or in PWM applications.
3.Description
Generation VTechnology Ultra Low On- Resistance Low Profile (<1.1mm) Available in Tape and Reel
2.Features
VDS (V)=30V RDS(ON)<250mΩ(VGS=10V) RDS(ON)<400mΩ(VGS=4.5V)
Fast Switching Lead-Free Ro HS pliant Halogen-Free
4.Pinning information
Pin
Symbol Description
SOT-23
GATE
SOURCE
DRAIN
1 2
5.Maximum ratings (TA=25°C unless otherwise noted)
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current æ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ê Peak diode Recovery dv/dt ç Junction and Storage Temperature Range
TA=25°C TA=70°C
TA=25°C
Symbol ID
PD VGS EAS dv/dt TJ,TSTG
Value Units
540 m W
4.3 m W/°C
±20
3.9 m J
V/ns
-55 to 150 °C
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
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