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IRLML2803PbF
l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l RoHS Compliant, Halogen-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
G1 S2
HEXFET® Power MOSFET
VDSS = 30V
3D
RDS(on) = 0.
IRLML2803PBF Datasheet
