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IRLML5203 - HEXFET Power MOSFET

General Description

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

Key Features

  • S: 233 Kansas St. , El Segundo, California 90245, USA Tel: (310) 252-7105 IR.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 93967 PROVISIONAL IRLML5203 HEXFET® Power MOSFET RDS(on) max (mΩ) 98@VGS = -10V 165@VGS = -4.5V l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -30V ID -3.0A -2.6A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.