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IRLMS2002 Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23.

Overview

PD- 93758D IRLMS2002 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated D D G 1 6 A D VDSS = 20V 2 5 D S 3 4 RDS(on) = 0.