IRLR3114ZPbF Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. - 97284A IRLR3114ZPbF IRLU3114ZPbF HEXFET® Power MOSFET VDSS = 40V RDS(on) = 4.9mΩ D-Pak I-Pak...