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IRLS3036PBF - 60V Single N-Channel HEXFET Power MOSFET

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Features

  • v, assuming ∆ Tj = 150°C and Tstart =25°C (Single Pulse) 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 14. Typical Avalanche Current vs. Pulsewidth 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 165A Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-.

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Datasheet Details

Part number IRLS3036PBF
Manufacturer International Rectifier
File Size 392.27 KB
Description 60V Single N-Channel HEXFET Power MOSFET
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PD -97358 IRLS3036PbF IRLSL3036PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 60V 1.9mΩ 2.
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