IRLU120NPBF - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRLU120NPBF
Manufacturer	International Rectifier
File Size	281.25 KB
Description	Power MOSFET
Datasheet	IRLU120NPBF Datasheet
Note	This datasheet PDF includes multiple part numbers: IRLU120NPBF, IRLR120NPBF. Please refer to the document for exact specifications by model.
Additional preview pages of the IRLU120NPBF datasheet.

Product details

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

D. U. T.
ISD controlled by Duty Factor "D".
D. U. T. - Device Under Test + - VDD Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD.
VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

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Other Datasheets by International Rectifier

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Published: Aug 11, 2015 |