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IRLU120NPBF - Power MOSFET

Download the IRLU120NPBF datasheet PDF. This datasheet also covers the IRLR120NPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Key Features

  • D. U. T.
  • ISD controlled by Duty Factor "D".
  • D. U. T. - Device Under Test + - VDD Driver Gate Drive P. W. Period D= P. W. Period VGS=10V.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop VDD Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 14. For N-Channel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR120NPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU120N N-Channel MOSFET INCHANGE
IRLU120 Power MOSFET Vishay
IRLU110 Power MOSFET Vishay
IRLU110A Power MOSFET Fairchild Semiconductor
IRLU110A N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU120N Power MOSFET
IRLU120 HEXFET Power MOSFET
IRLU120PBF POWER MOSFET
IRLU110 POWER MOSFET
IRLU110PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRLR120NPbF IRLU120NPbF l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.