IRLU120 Datasheet | Vishay

.vishay. IRLR120, IRLU120, Si HLR120, Si HLU120 Vishay Siliconix Power MOSFET DPAK (TO-252) IPAK (TO-251) GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (n C) Qgs (n C) Qgd (n C) Configuration VGS = 5.0 V 12 Single Features - Dynamic d V/dt rating - Repetitive avalanche rated - Surface-mount (IRLR120, Si HLR120) - Straight lead (IRLU120, Si HLU120) - Available in tape and re Mel - Logic-level gate drive Available - RDS(on) specified at VGS = 4 V and 5 V - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU, Si HLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free Si HLR120-GE3 IRLR120Pb...