JANSH2N7261 Datasheet | International Rectifier

- 90653B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 100Volt, 0.18Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No pensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds....