| Part number | JANSH2N7262 |
|---|---|
| Datasheet | JANSH2N7262_InternationalRectifier.pdf |
| File Size | 302.39 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
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Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No pensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| JANSH2N7261 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
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| JANS1N7039CCT1 | Schottky Rectifier |
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| JANS1N7043CCT1 | SCHOTTKY RECTIFIER |
