JANSR2N7389 Datasheet | International Rectifier

RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39) PD-90882H IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630 RAD Hard™HEXFET ® TECHNOLOGY Product Summary Part Number Radiation Level IRHF9130 100 kRads(Si) IRHF93130 300 kRads(Si) RDS(on) 0.30 0.30 -6.5A -6.5A QPL Part Number JANSR2N7389 JANSF2N7389 Description IR HiRel RADHard™ HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has long history of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low RDS(on) and low gate charge...