JANSR2N7389 - Radiation Hardened Power MOSFET

Product Overview

International Rectifier

Part number	JANSR2N7389
Manufacturer	International Rectifier
File Size	1.13 MB
Description	Radiation Hardened Power MOSFET
Datasheet	JANSR2N7389 Datasheet
Additional preview pages of the JANSR2N7389 datasheet.

IR HiRel RADHard™ HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

This technology has long history of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Single Event Effect (SEE) Hardened.
Low RDS(on).
Low Total Gate Charge.
Proton Tolerant.
Simple Drive Requirements.
Hermetically Sealed.
Ceramic Package.
Light Weight.
ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter Value Pre-Irradiation Units ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current -6.5 ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current -4.1 IDM @ TC = 25°C Pulsed Drain Current .

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Published: Apr 7, 2005 |