Datasheet Summary
PD-96899C
IRHYS597Z30CM JANSR2N7519T3
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level IRHYS597Z30CM 100 kRads(Si) IRHYS593Z30CM 300 kRads(Si)
RDS(on) 0.072 0.072
ID -20A- -20A-
QPL Part Number JANSR2N7519T3 JANSF2N7519T3
30V, P-CHANNEL
REF: MIL-PRF-19500/732
R5 TECHNOLOGY
Low-Ohmic TO-257AA
Description
IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(mg/cm2). The bination of low RDS(on) and low gate charge reduces the power losses in switching...