JANSR2N7520T3 Datasheet | International Rectifier

PD-96911A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary IRHYS597034CM JANSR2N7520T3 60V, P-CHANNEL REF: MIL-PRF-19500/732 5 TECHNOLOGY ™ Part Number IRHNJ597034CM IRHNJ593034CM Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.08Ω 0.08Ω ID -20A -20A QPL Part Number JANSR2N7520T3 JANSF2N7520T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC...