Overview: PD-96911A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary IRHYS597034CM
JANSR2N7520T3 60V, P-CHANNEL
REF: MIL-PRF-19500/732
5 TECHNOLOGY
Part Number IRHNJ597034CM IRHNJ593034CM Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.08Ω 0.08Ω ID -20A -20A QPL Part Number JANSR2N7520T3 JANSF2N7520T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
