Overview: PD-94343A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Product Summary IRHY597130CM
JANSR2N7547T3 100V, P-CHANNEL
REF: MIL-PRF-19500/712
5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A JANSR2N7547T3 IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A JANSF2N7547T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
