Datasheet Details
| Part number | JANSR2N7584T1 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 501.56 KB |
| Description | POWER MOSFET |
| Datasheet | JANSR2N7584T1-InternationalRectifier.pdf |
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Overview: RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level IRHMS67260 100 kRads(Si) IRHMS63260 300 kRads(Si) RDS(on) 0.029 0.
| Part number | JANSR2N7584T1 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 501.56 KB |
| Description | POWER MOSFET |
| Datasheet | JANSR2N7584T1-InternationalRectifier.pdf |
|
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|
IR HiRel R6 technology provides high performance power MOSFETs for space applications.
These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm2).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers.
| Part Number | Description |
|---|---|
| JANSR2N7583U2 | POWER MOSFET |
| JANSR2N7583U2A | Radiation Hardened Power MOSFET |
| JANSR2N7587U3 | N-Channel Power MOSFET |
| JANSR2N7500U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
| JANSR2N7519T3 | 30V P-Channel MOSFET |
| JANSR2N7520T3 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7524T1 | P-CHANNEL POWER MOSFET |
| JANSR2N7547T3 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7549U2 | P-CHANNEL POWER MOSFET |
| JANSR2N7550U2 | POWER MOSFET |