JANSR2N7591U3 Description
IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 MeV-cm2/mg. The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers.
JANSR2N7591U3 Key Features
- Single Event Effect (SEE) Hardened
- Low RDS(on)
- Low Total Gate Charge
- Simple Drive Requ