Datasheet Details
| Part number | JANSR2N7591U3 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 416.65 KB |
| Description | POWER MOSFET |
| Datasheet |
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IR HiRel R6 technology provides high performance power MOSFETs for space applications.
These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 MeV-cm2/mg.
| Part number | JANSR2N7591U3 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 416.65 KB |
| Description | POWER MOSFET |
| Datasheet |
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| Part Number | Description | Manufacturer |
|---|---|---|
| JANSR2N7593U3 | 250V N-Channel MOSFET | Microchip |
| JANSR2N7549T1 | RADIATION HARDENED POWER MOSFET | IRF |
| JANSR2N7587U3 | Preliminary 100V N-Channel Radiation-Hardened MOSFET | Microchip |
| JANSR2N7589U3 | 150V N-Channel MOSFET | Microchip |
| JANSR2N7272 | 8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET | Intersil Corporation |
| Part Number | Description |
|---|---|
| JANSR2N7598U3CE | Radiation Hardened Power MOSFET |
| JANSR2N7500U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
| JANSR2N7519T3 | 30V P-Channel MOSFET |
| JANSR2N7520T3 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7524T1 | P-CHANNEL POWER MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.