Datasheet4U Logo Datasheet4U.com

JANSR2N7591U3 - POWER MOSFET

General Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications.

These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 MeV-cm2/mg.

Key Features

  • Single Event Effect (SEE) Hardened.
  • Low RDS(on).
  • Low Total Gate Charge.
  • Simple Drive Requ.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-96923E IRHNJ67230 JANSR2N7591U3 200V, N-CHANNEL REF: MIL-PRF-19500/746 R6 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67230 100 kRads(Si) 0.13 16A JANSR2N7591U3 IRHNJ63230 300 kRads(Si) 0.13 16A JANSF2N7591U3 SMD-0.5 Description IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 MeV-cm2/mg. The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers.